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A new breakthrough in 200mm silicon-based GaN Micro LED! Veeco and ALLOS showcase cooperation results
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Veeco Instruments Inc. (Nasdaq: VECO) and ALLOS Semiconductors GmbH announced on the 10th that they have achieved another phase of cooperation. The two companies are working together to provide industry-leading silicon-based GaN epitaxial wafer technology for Micro LED production applications.
The company's recent collaboration aims to showcase ALLOS 200 mm silicon-based GaN epitaxial wafer technology on Veeco PropelTM MOCVD reactors while producing epitaxial wafers for a number of leading consumer electronics companies worldwide. Reproducibility.
“To turn Micro LED technology into production, it’s not enough to show the dominant value based on individual indicators. We have to ensure that the complete specifications of each epitaxial wafer have excellent repeatability and benefits,” said Veeco Compound Semiconductor, Senior Vice President, Business Unit And general manager Dr. Peo Hansson said. "This successful alliance reaffirms Veeco's excellent MOCVD expertise combined with ALLOS silicon-based GaN epitaxial wafer technology to provide customers with proven, reliable and innovative solutions to accelerate Micro LED applications."
As a standard, traditional LED technology achieves wavelength consistency through classification and grading. However, due to the small size and large number of Micro LEDs that cannot be classified and graded, the uniformity of epitaxial deposition becomes more important. To make the promise of mass production of Micro LED displays a reality, the most important success factor is to achieve excellent emission wavelength uniformity, eliminating the need for separate Micro LED chip testing and sorting. The epitaxial wafer grading should be between +/-1 nm (lower limit) and +/-4 nm (upper limit) depending on the industry's target, depending on the application and mass transfer method. Through collaborative projects, Veeco and ALLOS further improve critical wavelength consistency with wafers with a standard deviation of only 0.85 nm, which is the industry's first in terms of production systems.
“Veeco and ALLOS validated the reproducibility between wafers. The average wavelength standard deviation of all wafers was 1.21 nm and the peak wavelength was in the range of +/- 0.5 nm. From this we moved towards +/-1 The goal of grading the nm epitaxial wafer is another big step,” said ALLOS CEO Burkhard Slischka. “Our technology is already available on wafers with a diameter of 200 mm, which enables the production of Micro LED chips using a low-cost, high-yield silicon series. In addition, we have a clear blueprint for 300 mm wafer applications.”
As the next major technology shift theme, Micro LEDs are receiving the attention of display technology innovators. According to LEDinside analysis, the output value of the Micro LED market will reach 3.18 billion US dollars in 2022. Micro LED technology with side lengths less than 100 μm is seen as an important driver for the development of lower-power flagship displays, and related technology promises fuel this optimism. However, high material costs, low revenues, and production of Micro LED mass transfer technology have hampered the development of such displays. This technology combination effectively addresses these challenges, and Veeco and ALLOS will continue to work with customers to further improve silicon-based GaN epitaxial wafers and Micro LED mass transfer technology.
On November 12, 2018, the two companies will jointly showcase their breakthrough achievements at the International Nitride Semiconductor Work Conference (IWN) in Kanazawa, Japan.
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